15.5 R<sub>DSON</sub> Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable R<sub>DSON</sub> Performers
نویسندگان
چکیده
An innovative method to filter out potentially unstable and unreliable RDSON drifting wafers is demonstrated in GaN-based power devices. Its concept is described and the correlation between screening test and long-term reliability data in terms of RDSON stability is also presented. In addition, we verify that this screening method can predict continuous dynamic RDSON characteristics, which is directly related to application performance.
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تاریخ انتشار 2015